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STM32G474PBY3TR Datasheet(PDF) 129 Page - STMicroelectronics

No. de pieza STM32G474PBY3TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer
PDF  236 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32G474PBY3TR Datasheet(HTML) 129 Page - STMicroelectronics

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STM32G474xB STM32G474xC STM32G474xE
Electrical characteristics
200
5.3.14
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 54 are derived from tests
performed under the conditions summarized in Table 17: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
Table 54. I/O static characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VIL(1)(2)
I/O input
low level
voltage
All except
FT_c
1.62 V<VDD<3.6 V
-
-
0.3xVDD
V
0.39xVDD-0.06(3)
FT_c
1.62 V<VDD<3.6 V
-
-
0.3xVDD
0.25xVDD
VIH(1)(2)
I/O input
high level
voltage
All except
FT_c
1.62 V<VDD<3.6 V
0.7xVDD
--
V
0.49xVDD +0.26(3)
--
FT_c
1.62 V<VDD<3.6 V
0.7xVDD
--
VHYS(3)
Input
hysteresis
TT_xx,
FT_xxx,
NRST
1.62 V<VDD<3.6 V
-
200
-
mV
Ileak
Input
leakage
current(3)
FT_xx
except
FT_c
0 < VIN ≤ VDD
-
-
±100
nA
VDD ≤ VIN ≤ VDD+1 V
-
-
650(4)
VDD+1 V < VIN ≤ 5.5 V
-
-
200(4)
FT_c
0 ≤ VIN ≤ VDDMAX
-
-
2000
VDD ≤ VIN <0.5 V
-
-
3000
FT_u, PC3
0 ≤ VIN ≤ VDD
-
-
±150
VDD ≤ VIN ≤ VDD+ 1 V
-
-
±2500
VDD ≤ VIN ≤ 5.5 V
-
-
±250
FT_d
0 ≤ VIN ≤ VDD
-
-
±4500
VDD + 1V ≤ VIN ≤ 5.5 V
-
-
±9000
TT_xx
0 ≤ VIN ≤ VDD
-
-
±150
VDD ≤ VIN ≤ 3.6 V
-
-
2000
RPU
Weak pull-
up
equivalent
resistor(5)
VIN = VSS
25
40
55
kΩ
RPD
Weak pull-
down
equivalent
resistor(5)
VIN = VDD
25
40
55
CIO
I/O pin
capacitance
I/O pin
capacitance
--
5
-
pF
1. Refer to Figure 25: I/O input characteristics



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