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STM32G474PBY3TR Datasheet(PDF) 121 Page - STMicroelectronics

No. de pieza STM32G474PBY3TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer
PDF  236 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G474PBY3TR Datasheet(HTML) 121 Page - STMicroelectronics

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DS12288 Rev 5
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STM32G474xB STM32G474xC STM32G474xE
Electrical characteristics
200
5.3.8
Internal clock source characteristics
The parameters given in Table 43 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 17: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 43. HSI16 oscillator characteristics(1)
1. Guaranteed by characterization results.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08 MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2)
2. Guaranteed by design.
Duty Cycle
-
45
-
55
%
∆Temp(HSI16)
HSI16 oscillator frequency
drift over temperature
TA= 0 to 85 °C
-1
-
1
%
TA= -40 to 125 °C
-2
-
1.5
%
∆VDD(HSI16)
HSI16 oscillator frequency
drift over VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
%
tsu(HSI16)(2)
HSI16 oscillator start-up
time
--
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
--
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
--
155
190
μA



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