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P1020HDB Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

No. de pieza P1020HDB
Descripción Electrónicos  N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Fabricante Electrónico  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Página de inicio  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

P1020HDB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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P1020HDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN
TYP
MAX
200
1
2
3
±100
nA
1
10
364
440
261
325
6
S
372
69
11
12.7
1.7
5.5
10
30
24
35
10
A
1
V
103
nS
377
nC
1Pulse test : Pulse Width
 300 msec, Duty Cycle  2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
DYNAMIC
V
mA
VGS = 0V, ID = 250mA
V(BR)DSS
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 4.5V, ID = 5A
mΩ
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
VGS(th)
IDSS
Gate-Body Leakage
IGSS
pF
Ciss
Coss
Output Capacitance
VDS = 200V, VGS = 0V
Crss
VDS = 160V, VGS = 0V , TJ = 125 °C
Forward Transconductance
1
gfs
Diode Reverse Recovery Charge
Continuous Current
3
Turn-On Delay Time
2
Zero Gate Voltage Drain Current
nC
Total Gate Charge
2
IF = 10A, VGS = 0V
trr
Gate-Drain Charge
2
IS
td(off)
tf
VSD
Qgd
Input Capacitance
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Fall Time
2
PARAMETER
SYMBOL
TEST CONDITIONS
Gate-Source Charge
2
Reverse Transfer Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
Qg
VDS = 160V
ID =10A,VGS = 10V
tr
Rise Time
2
Qgs
STATIC
LIMITS
UNITS
Forward Voltage
1
Diode Reverse Recovery Time
IF = 10A, dl/dt = 100A / mS
nS
VDS = 100V,ID @ 10A,
VGS = 10V, RGEN = 6Ω
td(on)
Turn-Off Delay Time
2
Qrr
REV 1.0
2
2017/6/9



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