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LP0701LGG Datasheet(PDF) 1 Page - Microchip Technology |
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LP0701LGG Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2018 Microchip Technology Inc. DS20005447A-page 1 LP0701 Features • Ultra-Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Freedom from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers General Description The LP0701 Enhancement-mode (normally-off) transistor uses a lateral MOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for handheld and battery-operated applications. Package Type See Table 3-1 and Table 3-2 for pin information. 3-lead TO-92 (Top view) GATE SOURCE DRAIN 8-lead SOIC (Top view) D D D D G S NC NC s P-Channel Enhancement-Mode Lateral MOSFET |
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