60N06 datasheet(1/2 Pages) ISC

No. de pieza	60N06

Descripción Electrónicos	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

60N06

·

DESCRIPTION

·

Drain Current ID= 60A@ TC=25℃

·

Static Drain-Source On-Resistance

: RDS(on) = 18mΩ(Max)

·

Fast Switching Speed

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

·

APPLICATIONS

·

General purpose power amplifier

High current,high speed switching

Solenoid and relay drivers

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

60

V

VGS

Gate-Source Voltage

±

20

V

ID

Drain Current-continuous@ TC=25℃

60

A

Drain Current-continuous@ TC=100℃

39

ID(puls)

Pulse Drain Current

120

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.125

℃

/W

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60N06 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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