WST2005 datasheet(2/6 Pages) WIINSOK

2 / 6 page

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

---

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V , ID=-

---

145

155

VGS=-2.5V , ID=-

0.5A

---

150

168

VGS=-1.8V , ID=-

0.3A

180

220

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.

-1

IDSS

Drain-Source Leakage Current

VDS=-

20V , VGS=0V , TJ=25℃

---

-1

IGSS

Gate-Source Leakage Current

VGS=±

12V , VDS=0V

---

100

gfs

Forward Transconductance

VDS=-5V , ID=-

---

Total Gate Charge (-4.5V)

VDS=-

6V , VGS=-4.5V , ID=-2.8A

---

4.9

Qgs

Gate-Source Charge

---

Qgd

Gate-Drain Charge

---

Td(on)

Turn-On Delay Time

VDS=-6V , VGS=-4.5V ,

RGEN=6Ω, RL=6Ω,

---

10.1

Rise Time

---

4.76

Td(off)

Turn-Off Delay Time

---

84.1

Fall Time

---

25.2

Ciss

Input Capacitance

VDS=-

6V , VGS=0V , f=1MHz

---

472

Coss

Output Capacitance

---

Crss

Reverse Transfer Capacitance

---

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper,t<10sec.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

WST2005

P-Ch MOSFET

Page 2

www.winsok.tw

Dec.2014

---

WST2005 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2005 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL