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WST2004 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST2004 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ RDS(ON) Static Drain-Source On-Resistance VGS= 4.5V , ID=0.4A --- 240 450 mΩ VGS= 2.5V , ID=0.3A --- 280 765 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.35 --- 1.0 V △ VGS(th) VGS(th) Temperature Coefficient --- -3.7 --- mV/℃ IDSS Drain-Source Leakage Current VDS= 16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS= 16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=± 8V , VDS=0V --- --- ± 10 uA gfs Forward Transconductance VDS=5V , ID=0. 1A --- 1.5 --- S Td(on) Turn-On Delay Time VDD= 15V , VGS=10V , RG= 6Ω, ID=0.1A --- 5.8 --- ns Tr Rise Time --- 2.9 --- Td(off) Turn-Off Delay Time --- 18 --- Tf Fall Time --- 9 --- Ciss Input Capacitance VDS= 15V , VGS=0V , f=1MHz --- 88 pF Coss Output Capacitance --- 15 Crss Reverse Transfer Capacitance --- 10 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1 00 mA ISM Pulsed Source Current 2,4 --- --- 0.5 A VSD Diode Forward Voltage 2 VGS=0V , IS= 0.2A , TJ=25℃ --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 WST2004 VGS= 1.8V , ID=0.2A --- 410 850 mΩ VGS= 1.5V , ID=0.1A --- 450 950 Notes : 1.. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. --- --- --- |
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