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FDMS3602S Datasheet(PDF) 10 Page - ON Semiconductor

No. de pieza FDMS3602S
Descripción Electrónicos  PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
PDF  15 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS3602S Datasheet(HTML) 10 Page - ON Semiconductor

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SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3602S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0
50
100
150
200
250
-5
0
5
10
15
20
25
30
TIME (ns)
di/dt = 300 A/μs
0
5
10
15
20
25
10
-6
10
-5
10
-4
10
-3
10
-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
VDS, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 27. FDMS3602S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-Source Voltage
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