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WSF3040 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WSF3040
Descripción Electrónicos  N-Ch MOSFET
PDF  5 Pages
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Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF3040 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF3040 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3040 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3040 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3040 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF3040 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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---
109
---
---
131
---
---
940
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.0193
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=30A
---
10
12
m
Ω
VGS=4.5V , ID=15A
---
15
18
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-3.97
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
34
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.8
3.6
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=15A
---
9.8
13.7
nC
Qgs
Gate-Source Charge
---
4.2
5.88
Qgd
Gate-Drain Charge
---
3.6
5.0
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
---
5
8.0
ns
Tr
Rise Time
---
8
14
Td(off)
Turn-Off Delay Time
---
31
62
Tf
Fall Time
---
4
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=15A
24.6
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
15
A
ISM
Pulsed Source Current
2,6
---
---
112
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
IF=30A , dI/dt=100A/µs , TJ=25℃
---
8.5
---
nS
Qrr
Reverse Recovery Charge
---
2.2
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
15A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
WSF3040
N-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)



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