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WSF3013 Datasheet(PDF) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WSF3013
Descripción Electrónicos  N-Ch and P-Channel MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF3013 Datasheet(HTML) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
30
---
---
V
VGS=-10V , ID=-
12A
---
23
32.5
RDS(ON)d
Static Drain-Source On-Resistance
VGS=-4.5V , ID=-
5A
---
32
42
m
Ω
VGS(th)
Gate Threshold Voltage
-1.
3
-1.
8
-2.
3
V
VGS=VDS , ID =-250uA
VDS=-
20V , VGS=0V , TJ=25℃
---
---
-1
IDSS
Drain-Source Leakage Current
VDS=-
20V , VGS=0V , TJ=85℃
---
---
-30
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Total Gate Charge
---
13
---
Gate-Source Charge
---
1.0
---
Gate-Drain Charge
VDS=-15V , VGS=-4.5V , ID=-1
2A
---
4.0
---
nC
Turn-On Delay Time
---
8.7
---
Rise Time
---
10
---
Turn-Off Delay Time
---
22
---
Fall Time
VDD=-15V , VGS=-10V , RG=
6Ω,
ID=-1A
,RL=15Ω,
---
9.0
---
ns
Input Capacitance
---
580
---
Output Capacitance
---
105
---
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
72
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
---
---
-
10
A
VG=VD=0V , Force Current
VSDe
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Page 3
www.winsok.tw
Dec.2014
WSF3013
N-Ch and P-Channel MOSFET
Note d：Pulse test; pulse width
£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
Qge
Qgse
Qgde
Td(on)e
Tre
Td(off)e
Tfe
Cisse
Cosse
Crsse



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