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WSF80N06 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WSF80N06
Descripción Electrónicos  N-Ch MOSFET
PDF  6 Pages
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Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF80N06 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
43
A
IDM
Pulsed Drain Current
270
A
PD@TC=25℃
Total Power Dissipation
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
---
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case
---
1.2
℃
/W
BVDSS
RDSON
ID
60V
7.2mΩ
80A
General Description
Applications
Consumer electronic power supply Motor
control
Synchronous-rectification Isolated DC
Synchronous-rectification applications
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Thermal Data
TO-252 Pin Configuration
Product Summery
WSF80N06 use advanced VD MOST
technology to provide low RDS(ON), low gate
charge, fast switching This device is
specially designed to get better ruggedness
and suitable to use in
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity or Invertors
N-Ch MOSFET
WSF80N06
Page 1
www.winsok.tw
Dec.2014


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