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PJM7002KNSM Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM7002KNSM
Descripción Electrónicos  N-Enhancement Field Effect Transistor
PDF  4 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM7002KNSM Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM7002KNSM
N-Enhancement Field Effect Transistor
1 / 4
www.pingjingsemi.com
Revison：1.0 Sep-2019
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Gate Source Voltage
VGSS
± 20
V
Drain Current
Continuous
Pulsed
ID
340
800
mA
Total Power Dissipation
Ptot
150
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833
O
C/W
Storage Temperature Range
Tj, TStg
150，- 55 to + 150
O
C
1. Gate 2. Source 3. Drain
Marking: 72K
Schematic diagram
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switching
High saturation current capability
High speed switching
ESD Protected
SOT-523
D
S
G


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