PJM2333PSC

P-Channel Enhancement Mode Power MOSFET

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Revison：1.0 Oct-2019

℃)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Static Charactristics

Drain-Source Breakdown Voltage

-12

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±100

nA

-0.4

-0.65

-1

V

Drain-Source On-State Resistance

Note3

-

19

30

mΩ

-

26

45

-

17

-

S

Dynamic Characteristics

Input Capacitance

f=1.0MHz

-

1100

-

pF

Output Capacitance

-

390

-

pF

Reverse Transfer Capacitance

-

300

-

pF

Switching Characteristics

Turn-on Delay Time

-

25

-

nS

Turn-on Rise Time

-

45

-

nS

Turn-Off Delay Time

-

72

-

nS

Turn-Off Fall Time

-

60

-

nS

Total Gate Charge

-

11.5

-

nC

Gate-Source Charge

-

1.5

-

nC

Gate-Drain Charge

-

3.2

-

nC

Drain-Source Diode Characteristics

-

-

-1.2

V

-

-

-6

A

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.