PJM7N02SA datasheet(2/5 Pages) PJSEMI

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PJM7N02SA

Silicon N-Channel Power MOSFET

www.pingjingsemi.com

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Revision：1.0 May-2018

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Units

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Drain to Source Leakage Current

IDSS

VDS =16V, VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±1

2V,VDS = 0V

±100

Gate threshold voltage(1)

VGS(th)

VDS =VGS, ID =250µA

0.4

1.0

Drain-source on-resistance(1)

RDS(on)

VGS =10V, ID =7A

mΩ

VGS =4.5V, ID =6.6A

mΩ

VGS =3.8V, ID =6A

mΩ

VGS =2.5V, ID =5.5A

mΩ

VGS =1.8V, ID =5A

mΩ

Forward tranconductance(1)

gFS

VDS =5V, ID =7A

Dynamic characteristics(2)

Input Capacitance

Ciss

VDS =10V,VGS =0V,f=1MHz

1150

Output Capacitance

Coss

185

Reverse Transfer Capacitance

Crss

145

Total gate charge

VDD =10V,VGS =4.5V,ID =7A

Gate-source charge

Qgs

0.8

Gate-drain charge

Qgd

3.2

Switching Characteristics(2)

Turn-on delay time

td(on)

VGS=5V,VDD=10V,

RL =1.35Ω,RGEN =3Ω,

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Source-Drain Diode characteristics

Diode Forward voltage(1)

VSD

VGS =0V, IS=1A

1.0

Notes :

1. Pulse test : pulse width≤300μs, duty cycle≤0.5%.

2. Guaranteed by design, not subject to production testing.

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