UTT15P06G-TN3-R datasheet(3/8 Pages) VBSEMI

No. de pieza	UTT15P06G-TN3-R

Descripción Electrónicos	P-Channel 60-V (D-S) MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C unless noted

Output Characteristics

Transconductance

Capacitance

246

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

2 V

3 V

4 V

246

TC = - 55 °C

25 °C

125 °C

ID - Drain Current (A)

100

200

300

400

500

600

700

800

102030

405060

VDS - Drain-to-Source Voltage (V)

Crss

Ciss

Coss

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

VGS - Gate-to-Source Voltage (V)

25 °C

125 °C

TC = - 55 °C

0.01

0.03

0.05

0.07

0.08

0.10

0.12

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

Qg - Total Gate Charge (nC)

VDS = 30 V

ID = 8.4 A

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UTT15P06G-TN3-R

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