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UT2955G-TN3-R Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

No. de pieza UT2955G-TN3-R
Descripción Electrónicos  P-Channel 60-V (D-S) MOSFET
PDF  8 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT2955G-TN3-R Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C unless noted
THERMAL RATINGS
On-Resistance vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
2.3
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
VGS = 10 V
ID = 50 A
Source-Drain Diode Forward Voltage
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
10
1
0.001
TJ = 25 °C
TJ = 150 °C
0.1
0.01
Drain Current vs. Case Temperature
0
2
4
6
8
10
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Safe Operating Area
100
10
0.001
0.1
1
10
100
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms, DC
10 µs
100 µs
*Limited by rDS(on)
VDS - Drain-to-Source Voltage (V)
*VGS
minimum VGS at which rDS(on) is specified
1
0.01
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT2955G-TN3-R
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