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PBLS6002D Datasheet(PDF) 4 Page - NXP Semiconductors |
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PBLS6002D Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 16 page ![]() 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 4 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb (°C) 0 160 120 40 80 006aaa461 0.4 0.2 0.6 0.8 Ptot (W) 0 (1) (2) (3) Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 312 K/W [2] - - 236 K/W [3] - - 208 K/W TR1; PNP low VCEsat transistor Rth(j-sp) thermal resistance from junction to solder point - - 105 K/W |
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