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AFP2307AS23RG Datasheet(PDF) 5 Page - VBsemi Electronics Co.,Ltd

No. de pieza AFP2307AS23RG
Descripción Electrónicos  P-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AFP2307AS23RG Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
0.5
1
1.5
2
2.5
3
025
50
75
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0
0.2
0.4
0.6
0.8
1
025
50
75
100
125
150
T
A - Ambient Temperature (°C)
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
AFP2307AS23RG
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