HT1X_SDS

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Product short data sheet

COMPANY PUBLIC

Rev. 3.1 — 10 December 2014

210531

5 of 9

NXP Semiconductors

HT1x

HITAG 1 transponder IC

8.

Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical

Characteristics section of this specification is not implied.

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical

Characteristics section of this specification is not implied.

9.

Abbreviations

Table 3.

Limiting values - HT1ICS3002W/V6F[1]

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

0.5

6.5

V

electrostatic discharge voltage

MIL-STD 883D, Method

3015.7, Human Body

2-

kV

latch-up current

MIL-STD 883D, Method 3023

100

-

mA

maximum input current

IN1-IN2

-

30

mA

junction temperature

55

+140

C

Table 4.

Limiting values - HT1MOA4S30 [1]

Symbol

Parameter

Conditions

Min

Max

Unit

storage temperature

55

+125

C

ambient temperature

25

+85

C

Table 5.

Abbreviations

Acronym

Description

AC

AntiCollision

CRC

Cyclic Redundancy Check

EEPROM

Electrically Erasable Programmable Read-Only Memory

IC

Integrated Circuit

RF

Radio Frequency

RWD

Read Write Device