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SPD30P06P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza SPD30P06P
Descripción Electrónicos  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SPD30P06P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  SPD30P06P Datasheet HTML 1Page - Inchange Semiconductor Company Limited SPD30P06P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc P-Channel MOSFET Transistor
SPD30P06P
·FEATURES
·
Static drain-source on-resistance:
RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
·
Advanced trench process technology
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Fast switching application.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
-30
A
PD
Total Dissipation @TC=25℃
125
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
1.2
℃
/W


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