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PJM2035PSA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM2035PSA
Descripción Electrónicos  Silicon P-Channel Power MOSFET
PDF  6 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2035PSA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM2035PSA
Silicon P-Channel Power MOSFET
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Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Type
Max
Units
Static Characteristics
Drain-source breakdown voltage
-V(BR)DSS
VGS = 0V, ID=-250µA
20
V
Zero gate voltage drain current
-IDSS
VDS =-
20V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS=±8V, VDS= 0V
±10
µA
Gate threshold voltage Note1
-VGS(th)
VDS =VGS, ID =-250µA
0.
4
0.
7
1
V
Drain-source on-resistance Note1
RDS(on)
VGS =-4.5V, ID=-4A
35
mΩ
VGS =-2.5V, ID=-4A
45
VGS =-1.8V, ID=-2A
62
Forward tranconductance Note1
gFS
VDS =-5V, ID=-4A
S
Dynamic characteristics
Input Capacitance
Ciss
VDS =-10V,VGS =0V,f=1MHz
1
610
pF
Output Capacitance
Coss
157
Reverse Transfer Capacitance
Crss
1
45
Switching Characteristics
Turn-on delay time
td(on)
VDS=-10V, VGS=-4.5V RGEN =
6Ω,
RL=
10Ω, ID=-1A
16.8
ns
Turn-on rise time
tr
1
2.4
Turn-off delay time
td(off)
94
.1
Turn-off fall time
tf
42.4
Total gate charge
Qg
VDS =-10V,VGS =-4.5V,ID =-4A
1
5.4
nC
Gate-source charge
Qgs
2.5
Gate-drain charge
Qgd
3.3
Source-Drain Diode characteristics
Diode Forward voltage Note1
-VDS
VGS =0V, IS=-1A
1
V
Notes:1. Pulse Test : Pulse width≦300µs, duty cycle≦2%
.
www.pingjingsemi.com
Revision：1.
0 Feb-2019
14



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