MMBTSC1815 datasheet(2/4 Pages) PJSEMI

No. de pieza	MMBTSC1815

Descripción Electrónicos	PNP Transistor

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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PNP Transistor

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Revision：1.0 Oct-2017

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 6 V, -IC = 2 mA Current Gain Group

HFE

120

200

350

140

240

400

700

Collector Base Cutoff Current

at -VCB = 50 V

-ICBO

100

Emitter Base Cutoff Current

at -VEB = 5 V

-IEBO

100

Emitter Base Breakdown Voltage

at -IE = 100 μA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

-VCE(sat)

0.3

Base Emitter Saturation Voltage

at -IC = 100 mA, -IB = 10 mA

-VBE(sat)

1.1

Transition Frequency

at -VCE = 10 V, -IC = 1 mA, f = 30 MHz

MHz

Collector Base Capacitance

at -VCB = 10 V, f = 1 MHz

Cob

Collector Base Breakdown Voltage

at -IC = 100 μA

-V(BR)CBO

-V(BR)CEO

Collector Emitter Breakdown Voltage

at -IC = 0.1 mA

Collector Emitter Cutoff Current

at -VCE = 50 V

-ICEO

μA

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