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MMBTSC1815 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTSC1815 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 4 page  MMBTS A1015 PNP Transistor 1 / 4 www.pingjingsemi.com Revision：1.0 Oct-2017 Features For Switching and AF Amplifier Applications. As Complementary Type of the NPN Transistor MMBTSC1815 is Recommended. Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Marking: MMBTSA1015O:10X MMBTSA1015Y:10Y MMBTSA1015G:10G MMBTSA1015L:10L |
Número de pieza similar - MMBTSC1815 |
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Descripción similar - MMBTSC1815 |
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