eGaN® FET DATASHEET

EPC2016C

EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |

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1.7

1.8

1.5

1.6

1.4

1.3

1.2

1.1

1

0.9

0.8

0

25

50

75

100

125

150

Figure 8: Normalized On-State Resistance vs. Temperature

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

0.6

0

25

50

75

100

125

150

Figure 9: Normalized Threshold Voltage vs. Temperature

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

6

12

18

24

30

36

25˚C

125˚C

Figure 7: Reverse Drain-Source Characteristics

600

500

400

300

200

100

0

0

20

40

60

80

100

Figure 5a: Capacitance (Linear Scale)

10

100

1000

1

0

20

40

60

80

100

Figure 5b: Capacitance (Log Scale)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Figure 6: Gate Charge

All measurements were done with substrate shortened to source.