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MMF60R360P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza MMF60R360P
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MMF60R360P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
MMF60R360P
·
FEATURES
·
With TO-220F packaging
·
High speed switching
·
Low gate input resistance
·
Standard level gate drive
·
Easy to use
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Power supply
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
11
A
IDM
Drain Current-Single Pulsed
33
A
PD
Total Dissipation
31
W
Tj
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
4.0
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62.5
℃
/W


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