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HMS8N50K Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HMS8N50K Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 7 page ![]() Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA, TJ=25℃ 500 -- -- V VGS = 0 V, ID = 250 uA, TJ=150℃ -- 550 -- V △ BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 uA VDS = 480 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.5 3.5 4.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 0.5 0.55 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.5 A (Note 4) -- 16 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 360 -- pF Coss Output Capacitance -- 25 -- pF Crss Reverse Transfer Capacitance -- 1.2 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 3.5 A, RG = 20 Ω (Note 4, 5) -- 25 -- ns tr Turn-On Rise Time -- 55 -- ns td(off) Turn-Off Delay Time -- 70 -- ns tf Turn-Off Fall Time -- 40 -- ns Qg Total Gate Charge VDS = 480 V, ID = 7 A, VGS = 10 V (Note 4, 5) -- 8 -- nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 7 A, -- 190 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 2.3 -- uC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25 ℃ 3. ISD≤7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃ 4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics HMS8N50K/HMS8N50I |
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