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LTC3370 Datasheet(PDF) 30 Page - Linear Technology |
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LTC3370 Datasheet(HTML) 30 Page - Linear Technology |
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30 / 44 page ![]() LTC3372 30 Rev. A For more information www.analog.com APPLICATIONS INFORMATION Both the VOUT and SENSE– pins are monitored for over- voltage conditions. An overvoltage condition is detected when either pin is 7.5% above the nominal output volt- age. When this condition is sensed, the top MOSFET is turned off and the bottom MOSFET is turned on until the overvoltage condition is cleared. The bottom MOSFET remains on continuously for as long as the overvoltage condition persists; if VOUT returns to a safe level, normal operation automatically resumes. AshortedtopMOSFETwillresultinahighcurrentcondition which will open the system fuse. The switching regulator will regulate properly with a leaky top MOSFET by altering the duty cycle to accommodate the leakage. Minimum On-Time Considerations The minimum on-time, tON(MIN), is the smallest time dura- tion that the HV controller is capable of turning on the top MOSFET. It is determined by internal timing delays and the gate charge required to turn on the top MOSFET. Low duty cycle applications may approach this minimum on-time limit and care should be taken to ensure that: tON(MIN) < VOUT VIN(f) If the duty cycle falls below what can be accommodated by the minimum on-time, the controller will begin to skip cycles. The output voltage will continue to be regulated, but the ripple voltage and current will increase. The minimum on-time of top FET is typically 60ns. How- ever, as the peak sense voltage decreases the minimum on-time gradually increases. This is of particular concern in forced continuous applications with low ripple current at light loads. If the duty cycle drops below the minimum on-time limit in this situation, a significant amount of cycle skipping can occur with correspondingly larger current and voltage ripple. Efficiency Considerations The percent efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Percent efficiency can be expressed as: %Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percent- age of input power. Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in HV regulator: 1) IC VIN current, 2) INTVCC regulator current, 3) I2R losses, 4) topside MOSFET transition losses. 1. The VIN current is the DC supply current given in the Electrical Characteristics table, which excludes MOS- FET driver and control currents. VIN current typically results in a small (<0.1%) loss. 2. INTVCC current is the sum of the MOSFET driver and control currents. The MOSFET driver current results from switching the gate capacitance of the power MOSFETs. Each time a MOSFET gate is switched from low to high to low again, a packet of charge, dQ, moves from INTVCC to ground. The resulting dQ/dt is a current out of INTVCC that is typically much larger than the control circuit current. In continuous mode, IGATECHG = f(QT + QB), where QT and QB are the gate charges of the topside and bottom side MOSFETs. InapplicationswhenVOUT/EXTVCCissetto5V,INTVCC is supplied through VOUT/EXTVCC. This scales the VIN current required for the driver and control circuits by a factor of (Duty Cycle)/(Efficiency). For example, in a 20V to 5V application, 10mA of INTVCC current results in approximately 2.5mA of VIN current. This reduces the midcurrent loss from 10% or more (if the driver was powered directly from VIN) to only a few percent. 3. I2RlossesarepredictedfromtheDCresistancesofthe fuse (if used), MOSFET, inductor, current sense resis- tor and input and output capacitor ESR. In continuous mode the average output current flows through L and RSENSE, but is chopped between the topside MOSFET and the synchronous MOSFET. If the two MOSFETs have approximately the same RDS(ON), then the re- sistance of one MOSFET can simply be summed with the resistances of L, RSENSE and ESR to obtain I2R High Voltage Buck Controller |
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