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MMD60R360P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MMD60R360P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor MMD60R360P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2 4 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.8A 0.38 Ω IGSS Gate-Source Leakage Current VGS= ±30V ±100 nA IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V 1 μ A VSD Diode forward voltage ISD= 11A, VGS = 0V 1.4 V |
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