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DAM45P40D Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM45P40D Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  P-Channel Enhancement Mode MOSFET Features VDSS = -40V RDS(ON) Typ.11.5mΩ @ VGS = -10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -40 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID -45 A @ Tc = 100°C -28 Drain Current Pulsed@ TC = 25°C IDM -180 A Single Pulse Avalanche Energy EAS 130 mJ Single Pulse Avalanche Current IAS 51 A Maximum Power Dissipation PD 73.5 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 1.7 °C/W Aug.2017 DAM45P40D Thermal Resistance Junction to ambient RθJA 62 °C/W |
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