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DAM10W30S Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

No. de pieza DAM10W30S
Descripción Electrónicos  NN-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Fabricante Electrónico  DACO [DACO SEMICONDUCTOR CO.,LTD.]
Página de inicio  http://www.dacosemi.com/
Logo DACO - DACO SEMICONDUCTOR CO.,LTD.

DAM10W30S Datasheet(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=250uA
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=30V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±20V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=250uA
1.2
1.8
2.5
V
Static Drain-Source On-Resistance
RDS(on)
VGS=10V
IDS=8A
-
10
13
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V
VGS=0V
Freq.=1MHz
-
620
900
pF
Output Capacitance
Coss
-
85
125
Reverse Transfer Capacitance
Crss
-
60
90
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=15V
VGS=10V
RG =
IDS=1A
-
3.8
7
ns
Rise Time
Tr
-
10
19
Turn-Off Delay Time
Td(off)
-
22
42
Fall Time
Tf
-
6.6
13
Total Gate Charge
Qg
VDS=15V
VGS=4.5V
IDS=5A
-
7.4
12
nC
Gate to Source Charge
Qgs
-
2.3
5
Gate to Drain Charge
Qgd
-
3
6
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=1A
-
-
1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=
25Ω, Starting TJ=25°C
3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Apr.2018
DAM10W30S



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