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WSB5552TH Datasheet(PDF) 2 Page - Will Semiconductor Ltd. |
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WSB5552TH Datasheet(HTML) 2 Page - Will Semiconductor Ltd. |
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2 / 3 page ![]() WSB5552TH Will Semiconductor Ltd. 2 Feb,2015– Rev. 1.0 Typical characteristics (Ta=25oC, Per diode) Forward voltage vs. Forward current Forward Current Derating Curve Reverse current vs. Reverse voltage Junction capacitance vs. Reverse voltage Electronics characteristics (TA=25oC, Per diode) Parameter Symbol Condition Min. Typ. Max. Unit Reverse Breakdown Voltage VR IR=0.5mA 100 - - V Forward voltage VF IF=5A - - 0.80 V Reverse current IR VR=100V - - 0.1 mA Junction capacitance CJ VR=25V, F=1MHz - 62 - pF 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1E-3 0.01 0.1 1 10 150 oC 125 oC 65 oC 25 oC 85 oC 0 oC Forward Voltage(V) -50 oC 0 20 40 60 80 100 1E-3 0.01 0.1 1 10 100 1000 10000 Reverse Voltage(V) 150 oC 125 oC 85 oC 65 oC 0 oC -50 oC 25 oC 0 5 10 15 20 25 10 100 1000 Reverse Voltage(V) 0 50 100 150 200 0 1 2 3 4 5 6 Case temperature( oC) |
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