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WSB5552TH Datasheet(PDF) 1 Page - Will Semiconductor Ltd. |
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WSB5552TH Datasheet(HTML) 1 Page - Will Semiconductor Ltd. |
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1 / 3 page ![]() WSB5552TH Will Semiconductor Ltd. 1 Feb,2015– Rev. 1.0 WSB5552TH Power Schottky Barrier Rectifier Features 2x5A average rectified forward current Low forward voltage and Low leakage current Excellent high junction temperature stability High forward surge capability Applications High frequency switch model power supplies DC-DC Convertors, Power adapters Http://www.sh-willsemi.com TO-263E-2L Circuit Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 100 V Reverse voltage (DC) VR 100 V Average rectified forward current Per diode IF 5 A Per device IF 10 A Peak Forward Surge Current (1) IFSM 100 A Junction temperature TJ 150 0C Operating temperature Topr -55 ~ 150 0C Storage temperature Tstg -55 ~ 150 0C Thermal Resistance Ratings Maximum Thermal Resistance Junction To case (Per leg) RθJC 2.2 °C/W Order information Device Package Marking Shipping WSB5552TH-3/T TO-263E-2L WSB5552THYW (2) 800/Reel&Tape Note 1: Pulse Width=8.3ms,Single Half Sine Pulse Note 2: WSB5552= Device code;TH=Special Code; Y=Year; W=Week (A~z) |
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