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WSB5552TH Datasheet(PDF) 1 Page - Will Semiconductor Ltd.

No. de pieza WSB5552TH
Descripción Electrónicos  Power Schottky Barrier Rectifier
PDF  3 Pages
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Fabricante Electrónico  WILLSEMI [Will Semiconductor Ltd.]
Página de inicio  http://www.willsemi.com/index.php?siteid=2
Logo WILLSEMI - Will Semiconductor Ltd.

WSB5552TH Datasheet(HTML) 1 Page - Will Semiconductor Ltd.

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WSB5552TH
Will Semiconductor Ltd.
1
Feb,2015– Rev. 1.0
WSB5552TH
Power Schottky Barrier Rectifier
Features
2x5A average rectified forward current
Low forward voltage and Low leakage current
Excellent high junction temperature stability
High forward surge capability
Applications
High frequency switch model power supplies
DC-DC Convertors, Power adapters
Http://www.sh-willsemi.com
TO-263E-2L
Circuit
Marking
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
100
V
Reverse voltage (DC)
VR
100
V
Average rectified forward current
Per diode
IF
5
A
Per device
IF
10
A
Peak Forward Surge Current (1)
IFSM
100
A
Junction temperature
TJ
150
0C
Operating temperature
Topr
-55 ~ 150
0C
Storage temperature
Tstg
-55 ~ 150
0C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction To case (Per leg)
RθJC
2.2
°C/W
Order information
Device
Package
Marking
Shipping
WSB5552TH-3/T
TO-263E-2L
WSB5552THYW (2)
800/Reel&Tape
Note 1: Pulse Width=8.3ms,Single Half Sine Pulse
Note 2: WSB5552= Device code;TH=Special Code; Y=Year; W=Week (A~z)


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