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DAM9N600F Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM9N600F Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 600V RDS(ON) Typ.0.8Ω @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 600 V Gate Source Voltage VGS ±30 V Drain Current Continuous @ Tc = 25°C ID 9 A @ Tc = 100°C 5.7 Drain Current Pulsed@ TC = 25°C IDM 36 A Single Pulse Avalanche Energy EAS 680 mJ Single Pulse Avalanche Current IAS 11.7 A Maximum Power Dissipation PD 41.7 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 3 °C/W Aug.2017 DAM9N600F Note3 |
Número de pieza similar - DAM9N600F |
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Descripción similar - DAM9N600F |
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