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PRM5R2N06CTF Datasheet(PDF) 1 Page - PFC Device Inc.

No. de pieza PRM5R2N06CTF
Descripción Electrónicos  60V Single N-Channel MOSFET
PDF  8 Pages
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Fabricante Electrónico  PFC [PFC Device Inc.]
Página de inicio  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM5R2N06CTF Datasheet(HTML) 1 Page - PFC Device Inc.

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60V Single N-Channel MOSFET
Sep-2016
Version 4.0
1 / 8
PFC Device Corporation
PRM5R2N06CTF
www.pfc-device.com
Major ratings and characteristics
Characteristics
Values
Units
VDS
60
V
ID (TC=25℃)
55
A
Max. RDS(ON)@VGS=10V
5.2
m
TJ Operating Junction
Temperature
-55 to +150
oC
General Description
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
 Charger Adapter
 Power Tools
 LED Lighting
Features
 Max. RDS(ON)=5.2mΩ@VGS=10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
PRM5R2N06CTF
ITO-220
G
D
S


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