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PRM4R9N10CTF Datasheet(PDF) 1 Page - PFC Device Inc.

No. de pieza PRM4R9N10CTF
Descripción Electrónicos  100V Single N-Channel MOSFET
PDF  8 Pages
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Fabricante Electrónico  PFC [PFC Device Inc.]
Página de inicio  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM4R9N10CTF Datasheet(HTML) 1 Page - PFC Device Inc.

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100V Single N-Channel MOSFET
Apr-2018
Version 4.1
1 / 8
PFC Device Corporation
PRM4R9N10CTF
www.pfc-device.com
Major ratings and characteristics
Characteristics
Values
Units
VDS
100
V
ID (TC=25℃)
60
A
Max. RDS(ON)@VGS=10V
4.9
mΩ
Ω
Ω
Ω
TJ Operating Junction
Temperature
-55 to +150
oC
General Description
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
Charger Adapter
Power Tools
LED Lighting
Features
Max. RDS(ON)=4.9mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
PRM4R9N10CTF
ITO-220
G
D
S


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