2N7002T datasheet(1/5 Pages) TGS

No. de pieza	2N7002T

Descripción Electrónicos	SOT-523 Plastic-Encapsulate MOSFETS

PDF	5 Pages

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Fabricante Electrónico	TGS [Tiger Electronic Co.,Ltd]

Página de inicio	http://www.tgselec.com

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SOT-523 Plastic-Encapsulate MOSFETS

2N7002T

MOSFET (N-Channel)

FEATURE

High density cell design for low RDS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Value

Unit

VGS

Gate-Source voltage

±20

V

VDS

Drain-Source voltage

60

V

ID

Drain Current

115

mA

PD

Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

SOT-523

1. GATE

2. SOURCE

3. DRAIN

Tstg

Storage Temperature

-55

~+150

℃

Thermal Resistance from Junction to Ambient

Symbol

RθJA

833

℃/W

1

J,Sep,2016

M

ARKING

Equivalent Circuit

APPLICATION

Load Switch for Portable Devices

DC/DC Converter

V(BR)DSS

RDS(on)MAX

ID

60 V

5Ω@10V

115mA

7Ω@5V

1

2

3

K72

K72= Device Code

Solid dot = Green molding compound device,if none,

the normal device.

TIGER ELECTRONIC CO.,LTD

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2N7002T Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd

2N7002T Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd

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