P1020HDB datasheet(2/4 Pages) NIKOSEM

No. de pieza	P1020HDB

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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H-6-1

N-Channel Enhancement Mode

Field Effect Transistor

P1020HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

Zero Gate Voltage Drain Current

IDSS

VDS = 200V, VGS = 0V

A

VDS = 160V, VGS = 0V, TJ = 125 ° C

Drain-Source On-State

Resistance

RDS(ON)

VGS =10V, ID = 5A

261

325

mΩ

VGS =4.5V, ID = 5A

364

440

Forward Transconductance

gfs

VDS = 10V, ID = 5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

372

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = 160V , ID =10A ,

VGS = 10V

12.7

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

5.5

Turn-On Delay Time

td(on)

VDS = 100V , ID  10A,

VGS = 10V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)

Continuous Current

Forward Voltage

VSD

IF = 10A, VGS = 0V

Diode Reverse Recovery Time

trr

IF= 10A, dI/dt=100A/μs

103

Diode Reverse Recovery Charge

Qrr

377

1Pulse test : Pulse Width  300 sec, Duty Cycle  2%.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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