P1020HDB datasheet(1/4 Pages) NIKOSEM

No. de pieza	P1020HDB

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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1

H-6-1

N-Channel Enhancement Mode

Field Effect Transistor

P1020HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 ° C

ID

10

A

TC = 100 ° C

6.3

Pulsed Drain Current

1

IDM

26

Avalanche Current

IAS

6.5

Avalanche Energy

L = 1mH

EAS

21.1

mJ

Power Dissipation

TC = 25 ° C

PD

52

W

TC = 100 ° C

20

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

62.5

° C / W

Junction-to-Case

RJC

2.4

1Pulse width limited by maximum junction temperature.

.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

200

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1

2

3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

200V

325mΩ

10A

1: GATE

2: DRAIN

3: SOURCE

G

D

S

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P1020HDB Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

P1020HDB Datasheet(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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