P0908AT datasheet(2/4 Pages) NIKOSEM

No. de pieza	P0908AT

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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REV 1.1

F-50-4

N-Channel Enhancement Mode

Field Effect Transistor

P0908AT

TO-220

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 20A

mΩ

VGS = 7V, ID = 15A

8.1

Forward Transconductance

gfs

VDS = 5V, ID = 20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

2853

Output Capacitance

Coss

355

Reverse Transfer Capacitance

Crss

199

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.9

Total Gate Charge

VGS = 10V

VDS =15V,ID = 20A

VGS = 7V

41.5

Gate-Source Charge

Qgs

15.3

Gate-Drain Charge

Qgd

19.4

Turn-On Delay Time

td(on)

VDD = 15V,

ID  20A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 20A, VGS = 0V

1.4

Reverse Recovery Time

trr

IF = 20A , dIs/dt= 100A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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