P0908AT datasheet(1/4 Pages) NIKOSEM

No. de pieza	P0908AT

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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REV 1.1

1

F-50-4

N-Channel Enhancement Mode

Field Effect Transistor

P0908AT

TO-220

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

80

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 ° C

ID

64

A

TC = 100 ° C

41

Pulsed Drain Current

1

IDM

160

Avalanche Current

IAS

49

Avalanche Energy

L = 0.1mH

EAS

120

mJ

Power Dissipation

TC = 25 ° C

PD

83

W

TC = 100 ° C

33

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.5

° C / W

Junction-to-Ambient

RJA

50

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

80

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

3.4

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 64V, VGS = 0V

1

A

VDS = 60V, VGS = 0V, TJ = 125 ° C

10

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

80V

9mΩ

64A

G

D

S

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P0908AT Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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