P0420HDB datasheet(2/4 Pages) NIKOSEM

No. de pieza	P0420HDB

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.niko-sem.com

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REV 1.0

G-22-5

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

P0420HDB

TO-252

Halogen-Free & Lead-Free

Gate Voltage Drain Current

IDSS

VDS = 200V, VGS = 0V , TC = 25 °C

A

VDS = 160V, VGS = 0V , TC = 100 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 10V, ID = 2A

0.6

0.75

VGS = 4.5V, ID = 2A

0.8

1.1

Forward Transconductance

gfs

VDS = 10V, ID = 2A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

177

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

7.5

Total Gate Charge

VDD = 160V, ID = 4A, VGS = 10V

5.8

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

2.4

Turn-On Delay Time

td(on)

VDD = 100V, ID = 4A, VGS = 10V

Rise Time

14.6

Turn-Off Delay Time

td(off)

15.6

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF =4A, VGS = 0V

1.5

Reverse Recovery Time

trr

IF = 4A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

197

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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