P0420HDB datasheet(1/4 Pages) NIKOSEM

No. de pieza	P0420HDB

Descripción Electrónicos	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Fabricante Electrónico	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

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REV 1.0

1

G-22-5

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

P0420HDB

TO-252

Halogen-Free & Lead-Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2

TC = 25 °C

ID

4

A

TC = 100 °C

2.7

Pulsed Drain Current

1 , 2

IDM

16

Avalanche Current

3

IAS

1

Avalanche Energy

3

E

AS

0.5

mJ

Power Dissipation

TC = 25 °C

PD

35

W

TC = 100 °C

14

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

3.5

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

3VDD = 50V , L = 1mH, starting TJ = 25˚C

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

200

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1

2

3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

200V

0.75Ω

4A

G

D

S

100% UIS tested

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P0420HDB Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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