TSM048NB06LCR datasheet(4/6 Pages) TSC

No. de pieza	TSM048NB06LCR

Descripción Electrónicos	N-Channel Power MOSFET 60V, 107A, 4.8m廓

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TSC [Taiwan Semiconductor Company, Ltd]

Página de inicio	http://www.taiwansemi.com

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TSM048NB06LCR

Taiwan Semiconductor

Version: B1804

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

VSD, Body Diode Forward Voltage (V)

VDS, Drain to Source Voltage (V)

0.1

100

0.2

0.4

0.6

0.8

25℃

-55℃

175℃

1000

2000

3000

4000

5000

6000

7000

8000

CISS

COSS

CRSS

100

1000

0.1

100

DS(ON)

SINGLE PULSE

RӨJC=1.1°C/W

C=25°C

0.01

0.1

0.0001

0.001

0.01

0.1

SINGLE PULSE

RӨJC=1.1°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

J = TC + PDM x Z

ӨJC x RӨJC

0.8

0.9

1.1

1.2

-75 -50 -25

75 100 125 150 175

D=5mA

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