ACE1933B datasheet(1/6 Pages) ACE

No. de pieza	ACE1933B

Descripción Electrónicos	N-Channel MOSFET

PDF	6 Pages

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE1933B

N-Channel MOSFET

VER 1.1

1

Description

The ACE1933B uses advanced trench technology to provide excellent RDS(ON) and low gate charge

and operation with gate voltages as low as 1.8v. This device is suitable for use as a high switching

applications.

Features

 V

DS=20V

 I

D=0.15A (VGS=10V)

 R

DS(ON) ≤

3

mΩ @ V

GS=4.5V

 R

DS(ON) ≤

6

mΩ@ V

GS=1.8V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Continuous)

TA=25℃

ID

0.15

A

TA=70℃

0.12

Drain Current (Pulsed)

IDM

0.8

A

Power Dissipation

TA=25℃

PD

0.3

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

Packaging Type

SOT-23-3

Ordering information

ACE1933B XX + H

SOT-23-3

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

BM : SOT23-3

Pb - free

Halogen - free

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ACE1933B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE1933B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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