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2N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2N60 · FEATURES · Drain current: ID= 2A@ TC=25℃ · Drain source voltage: VDSS= 600V(Min) · Static drain-source on-resistance: RDS(on) = 5.0Ω(Max) · Fast switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operationz · APPLICATIONS · Switching power supplies,converters · AC and DC motor controls · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 8 A PD Total Dissipation 45 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 4.0 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 54 ℃ /W |
Número de pieza similar - 2N60 |
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Descripción similar - 2N60 |
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