ZXMP6A13FTC datasheet(4/7 Pages) ZETEX

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ZXMP6A13F

ISSUE 2 - JULY 2004

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-60

ID=-250 A, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1

AVDS=-60V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.0

=-250 A, VDS=VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.400

0.600

VGS=-10V, ID=-0.9A

VGS=-4.5V, ID=-0.8A

Forward Transconductance

(1)(3)

gfs

1.8

VDS=-15V,ID=-0.9A

DYNAMIC

(3)

Input Capacitance

Ciss

233

VDS=-30V, VGS=0V,

f=1MHz

Output Capacitance

Coss

17.4

Reverse Transfer Capacitance

Crss

9.6

SWITCHING

(2) (3)

Turn-On Delay Time

td(on)

1.6

VDD =-30V, ID=-1A

RG 6.0 ,VGS=-10V

Rise Time

2.3

Turn-Off Delay Time

td(off)

Fall Time

5.8

Gate Charge

2.4

VDS=-30V,VGS=-5V,

ID=-0.9A

Total Gate Charge

5.1

VDS=-30V,VGS=-10V,

ID=-0.9A

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

0.7

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

VSD

-0.85

-0.95

TJ=25°C, IS=-0.8A,

VGS=0V

Reverse Recovery Time

(3)

trr

22.6

TJ=25°C, IF=-0.9A,

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

Qrr

23.2

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

NOTES:

(1) Measured under pulsed conditions. Width

=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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