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AP4936M Datasheet(PDF) 2 Page - Advanced Power Technology

No. de pieza AP4936M
Descripción Electrónicos  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Fabricante Electrónico  ADPOW [Advanced Power Technology]
Página de inicio  http://www.advpowertech.com
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AP4936M Datasheet(HTML) 2 Page - Advanced Power Technology

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
-
37
mΩ
VGS=4.5V, ID=3.5A
-
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
6.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=20V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=5A
-
6.9
-
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
4.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=16V
-
6
-
ns
tr
Rise Time
ID=5A
-
17.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.5
-
ns
tf
Fall Time
RD=3.2Ω
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
218
-
pF
Coss
Output Capacitance
VDS=25V
-
155
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
63
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
-
1.67
A
VSD
Forward On Voltage
2
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4936M
± 20V
±100



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