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AFT09MS007N Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza AFT09MS007N
Descripción Electrónicos  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MS007N Datasheet(HTML) 3 Page - NXP Semiconductors

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AFT09MS007NT1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ = 100 mA, Pin = 0.22W,f= 870 MHz
Common--Source Amplifier Output Power
Pout
—
7.3
—
W
Drain Efficiency
D
—
71.0
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test Voltage, VDD
Result
870
CW
> 65:1 at all Phase Angles
0.4
(3 dB Overdrive)
10.8
No Device Degradation



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