AFT09MP055N datasheet(12/21 Pages) NXP

No. de pieza	AFT09MP055N

Descripción Electrónicos	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

PDF	21 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NXP [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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12 / 21 page

RF Device Data

Freescale Semiconductor, Inc.

AFT09MP055NR1 AFT09MP055GNR1

TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND

REFERENCE CIRCUIT

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 14. Output Power versus Gate--Source Voltage

f = 816 MHz

Detail A

0.5

1.5

2.5

f = 816 MHz

VGS, GATE--SOURCE VOLTAGE (VOLTS)

VDD = 12.5 Vdc, Pin =1.5 W

VDD = 13.6 Vdc, Pin =1.5 W

Detail A

VDD = 13.6 Vdc, Pin =1 W

VDD = 12.5 Vdc

Pin =1 W

VDD = 13.6 Vdc, Pin =1.5 W

VDD = 13.6 Vdc, Pin =1 W

VDD = 12.5 Vdc, Pin =1.5 W

VDD = 12.5 Vdc

Pin =1 W

100

120

Figure 15. Power Gain, Output Power and Drain

Efficiency versus Input Power and Frequency

Pin, INPUT POWER (WATTS)

Gps

Pout

VDD = 12.5 Vdc, IDQ(A+B) = 800 mA

764 MHz

ηD

870 MHz

0.1

816 MHz

870 MHz

816 MHz

764 MHz

816 MHz

764 MHz

870 MHz

AFT09MP055N Datasheet(PDF) 12 Page - NXP Semiconductors

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