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AFT09MP055N Datasheet(PDF) 11 Page - NXP Semiconductors

No. de pieza AFT09MP055N
Descripción Electrónicos  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
PDF  21 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT09MP055N Datasheet(HTML) 11 Page - NXP Semiconductors

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AFT09MP055NR1 AFT09MP055GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND
REFERENCE CIRCUIT
15.5
760
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 12.5 Vdc
14
18
50
68
64
60
56
65
60
55
ηD
17.5
16.5
14.5
800
840
880
52
VDD = 12.5 Vdc, Pin =1.5 W(Avg.)
IDQ(A+B) = 800 mA
Pout
17
16
15
15.5
760
Gps
f, FREQUENCY (MHz)
Figure 13. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 13.6 Vdc
14
18
50
70
65
60
55
65
60
55
ηD
17.5
16.5
14.5
800
840
880
50
VDD = 13.6 Vdc, Pin =1 W(Avg.)
IDQ(A+B) = 800 mA
Pout
17
16
15



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